FDN359BN general description this n-channel logic level mosfet is produced using fairchild?s se miconductor?s advanced powertrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. these devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required. features ? 2.7 a, 30 v. r ds(on) = 0.046 ? @ v gs = 10 v r ds(on) = 0.060 ? @ v gs = 4.5 v ? very fast switching speed. ? low gate charge (5nc typical) ? high performance version of industry standard sot-23 package. identical pin out to sot-23 with 30% higher power handling capability. g d s supersot -3 tm d s g absolute maximum ratings t a =25 o c unless otherwise noted symbol parameter ratings units v dss drain-source voltage 30 v v gss gate-source voltage 20 v maximum drain current ? continuous (note 1a) 2.7 i d ? pulsed 15 a maximum power dissipation (note 1a) 0.5 p d (note 1b) 0.46 w t j , t stg operating and storage temperature range ? 55 to +150 c thermal characteristics r ja thermal resistance, junction-to-ambient (note 1a) 250 c/w r jc thermal resistance, junction-to-case (note 1) 75 c/w package marking and ordering information device marking device reel size tape width quantity 359b FDN359BN 7?? 8mm 3000 units 1 of 3 4008-318-123 http://www.twtysemi.com smd type smd type smd type smd type smd type smd type smd type smd type smd type smd type product specification
electrical characteristics t a = 25c unless otherwise noted symbol parameter test conditions min typ max units off characteristics bv dss drain?source breakdown voltage v gs = 0 v, i d = 250 a 30 v ? bv dss ? t j breakdown voltage temperature coefficient i d = 250 a,referenced to 25 c 21 mv/ c v ds = 24 v, v gs = 0 v 1 a i dss zero gate voltage drain current t j = -55 o c 10 a i gss gate?body leakage v gs = 20 v, v ds = 0 v 100 na on characteristics (note 2) v gs(th) gate threshold voltage v ds = v gs , i d = 250 a 1 1.8 3 v ? v gs(th) ? t j gate threshold voltage temperature coefficient i d = 250 a,referenced to 25 c ?4 mv/ c r ds(on) static drain?source on?resistance v gs = 10 v, i d = 2.7 a v gs = 4.5 v, i d = 2.4 a v gs = 10 v, i d = 2.7 a, t j = 125 c 0.026 0.032 0.033 0.046 0.060 0.075 ? i d(on) on?state drain current v gs = 10 v, v ds = 5 v 15 a g fs forward transconductance v ds = 5v, i d = 2.7 a 11 s dynamic characteristics c iss input capacitance 485 650 pf c oss output capacitance 105 140 pf c rss reverse transfer capacitance v ds = 15 v, v gs = 0 v, f = 1.0 mhz 65 100 pf r g gate resistance f = 1.0 mhz 1.8 ? switching characteristics (note 2) t d(on) turn?on delay time 7 14 ns t r turn?on rise time 5 10 ns t d(off) turn?off delay time 20 35 ns t f turn?off fall time v dd = 15v, i d = 1 a, v gs = 10 v, r gen = 6 ? 2 4 ns q g total gate charge 5 7 nc q gs gate?source charge 1.3 nc q gd gate?drain charge v ds = 15 v, i d = 2.7 a, v gs = 5 v 1.8 nc 2 of 3 4008-318-123 http://www.twtysemi.com FDN359BN smd type smd type smd type smd type smd type smd type smd type smd type smd type smd type product specification
electrical characteristics t a = 25c unless otherwise noted symbol parameter test conditions min typ max units drain?source diode characteristics and maximum ratings i s maximum continuous drain?source diode forward current 0.42 a v sd drain?source diode forward voltage v gs = 0 v, i s = 0.42 a (note 2) 0.7 1.2 v trr diode reverse recovery time 12 20 ns qrr diode reverse recovery charge if = 2.7a, dif/dt = 100 a/s 3 5 nc otes: 1. r ja is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the so lder mounting surface of the drain pins. r jc is guaranteed by design while r ca is determined by the user's board design. a) 250 c/w when mounted on a 0.02 in 2 pad of 2 oz. copper. b) 270c/w when mounted on a minimum pad. scale 1 : 1 on letter size paper 2. pulse test: pulse width 300 s, duty cycle 2.0% 3 of 3 4008-318-123 http://www.twtysemi.com FDN359BN smd type smd type smd type smd type smd type smd type smd type smd type smd type smd type product specification
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